SPRAY SYSTEM FOR SLURRY REDUCTION DURING CHEMICAL MECHANICAL POLISHING (CMP)
Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system usin...
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| creator | Mikhaylichenko, Ekaterina Rondum, Erik Lee, Christopher Heung-Gyun Iyer, Anand Nilakantan Chang, Shou-Sung Cheung, Tiffany Yu-nung Chou, Chih Chung |
| description | Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system using a carrier assembly. A fluid is dispensed onto the pad from a fluid delivery assembly at a variable flow rate and a first flow rate of the variable flow rate is pulsed at a frequency and a duty cycle. The frequency refers to a number of pulses of the fluid at the first flow rate per rotation of the pad. The term duty cycle refers to a percentage of the pad exposed to fluid per rotation of the pad. The carrier assembly is translated across a surface of the pad while rotating the carrier assembly about a rotational axis. |
| format | Patent |
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In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system using a carrier assembly. A fluid is dispensed onto the pad from a fluid delivery assembly at a variable flow rate and a first flow rate of the variable flow rate is pulsed at a frequency and a duty cycle. The frequency refers to a number of pulses of the fluid at the first flow rate per rotation of the pad. The term duty cycle refers to a percentage of the pad exposed to fluid per rotation of the pad. The carrier assembly is translated across a surface of the pad while rotating the carrier assembly about a rotational axis.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221229&DB=EPODOC&CC=US&NR=2022410336A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221229&DB=EPODOC&CC=US&NR=2022410336A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mikhaylichenko, Ekaterina</creatorcontrib><creatorcontrib>Rondum, Erik</creatorcontrib><creatorcontrib>Lee, Christopher Heung-Gyun</creatorcontrib><creatorcontrib>Iyer, Anand Nilakantan</creatorcontrib><creatorcontrib>Chang, Shou-Sung</creatorcontrib><creatorcontrib>Cheung, Tiffany Yu-nung</creatorcontrib><creatorcontrib>Chou, Chih Chung</creatorcontrib><title>SPRAY SYSTEM FOR SLURRY REDUCTION DURING CHEMICAL MECHANICAL POLISHING (CMP)</title><description>Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system using a carrier assembly. A fluid is dispensed onto the pad from a fluid delivery assembly at a variable flow rate and a first flow rate of the variable flow rate is pulsed at a frequency and a duty cycle. The frequency refers to a number of pulses of the fluid at the first flow rate per rotation of the pad. The term duty cycle refers to a percentage of the pad exposed to fluid per rotation of the pad. The carrier assembly is translated across a surface of the pad while rotating the carrier assembly about a rotational axis.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAJDghyjFQIjgwOcfVVcPMPUgj2CQ0KilQIcnUJdQ7x9PdTcAkN8vRzV3D2cPX1dHb0UfB1dfZw9AMzA_x9PIM9QLIazr4BmjwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JD402MjAyMjE0MDY2MzR0Jg4VQCD2S7Q</recordid><startdate>20221229</startdate><enddate>20221229</enddate><creator>Mikhaylichenko, Ekaterina</creator><creator>Rondum, Erik</creator><creator>Lee, Christopher Heung-Gyun</creator><creator>Iyer, Anand Nilakantan</creator><creator>Chang, Shou-Sung</creator><creator>Cheung, Tiffany Yu-nung</creator><creator>Chou, Chih Chung</creator><scope>EVB</scope></search><sort><creationdate>20221229</creationdate><title>SPRAY SYSTEM FOR SLURRY REDUCTION DURING CHEMICAL MECHANICAL POLISHING (CMP)</title><author>Mikhaylichenko, Ekaterina ; Rondum, Erik ; Lee, Christopher Heung-Gyun ; Iyer, Anand Nilakantan ; Chang, Shou-Sung ; Cheung, Tiffany Yu-nung ; Chou, Chih Chung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022410336A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Mikhaylichenko, Ekaterina</creatorcontrib><creatorcontrib>Rondum, Erik</creatorcontrib><creatorcontrib>Lee, Christopher Heung-Gyun</creatorcontrib><creatorcontrib>Iyer, Anand Nilakantan</creatorcontrib><creatorcontrib>Chang, Shou-Sung</creatorcontrib><creatorcontrib>Cheung, Tiffany Yu-nung</creatorcontrib><creatorcontrib>Chou, Chih Chung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mikhaylichenko, Ekaterina</au><au>Rondum, Erik</au><au>Lee, Christopher Heung-Gyun</au><au>Iyer, Anand Nilakantan</au><au>Chang, Shou-Sung</au><au>Cheung, Tiffany Yu-nung</au><au>Chou, Chih Chung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPRAY SYSTEM FOR SLURRY REDUCTION DURING CHEMICAL MECHANICAL POLISHING (CMP)</title><date>2022-12-29</date><risdate>2022</risdate><abstract>Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system using a carrier assembly. A fluid is dispensed onto the pad from a fluid delivery assembly at a variable flow rate and a first flow rate of the variable flow rate is pulsed at a frequency and a duty cycle. The frequency refers to a number of pulses of the fluid at the first flow rate per rotation of the pad. The term duty cycle refers to a percentage of the pad exposed to fluid per rotation of the pad. The carrier assembly is translated across a surface of the pad while rotating the carrier assembly about a rotational axis.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | SPRAY SYSTEM FOR SLURRY REDUCTION DURING CHEMICAL MECHANICAL POLISHING (CMP) |
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