Integrated Assemblies Having Voids Along Regions of Gates, and Methods of Forming Conductive Structures

Some embodiments include an integrated assembly with a semiconductor-material-structure having a first source/drain region, a second source/drain region, and a channel region between the first and second source/drain regions. The semiconductor-material-structure has a first side and an opposing seco...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Tang, Sanh D
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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