Method for Producing Radiation-Emitting Semiconductor Chips, Radiation-Emitting Semiconductor Chip and Radiation-Emitting Component
In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangeme...
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| creator | Pfeuffer, Alexander F Schwarz, Thomas Hoibl, Sebastian Perzlmaier, Korbinian Meyer, Tobias |
| description | In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022406757A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022406757A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022406757A13</originalsourceid><addsrcrecordid>eNrjZGj2TS3JyE9RSMsvUggoyk8pTc7MS1cISkzJTCzJzM_Tdc3NLCkBCQWn5mYm5-cBFZQAlTpnZBYU6xCnTiExLwWbSuf83IL8vNS8Eh4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgZGRiYGZuau5oaEycKgBlXUt9</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for Producing Radiation-Emitting Semiconductor Chips, Radiation-Emitting Semiconductor Chip and Radiation-Emitting Component</title><source>esp@cenet</source><creator>Pfeuffer, Alexander F ; Schwarz, Thomas ; Hoibl, Sebastian ; Perzlmaier, Korbinian ; Meyer, Tobias</creator><creatorcontrib>Pfeuffer, Alexander F ; Schwarz, Thomas ; Hoibl, Sebastian ; Perzlmaier, Korbinian ; Meyer, Tobias</creatorcontrib><description>In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221222&DB=EPODOC&CC=US&NR=2022406757A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221222&DB=EPODOC&CC=US&NR=2022406757A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Pfeuffer, Alexander F</creatorcontrib><creatorcontrib>Schwarz, Thomas</creatorcontrib><creatorcontrib>Hoibl, Sebastian</creatorcontrib><creatorcontrib>Perzlmaier, Korbinian</creatorcontrib><creatorcontrib>Meyer, Tobias</creatorcontrib><title>Method for Producing Radiation-Emitting Semiconductor Chips, Radiation-Emitting Semiconductor Chip and Radiation-Emitting Component</title><description>In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZGj2TS3JyE9RSMsvUggoyk8pTc7MS1cISkzJTCzJzM_Tdc3NLCkBCQWn5mYm5-cBFZQAlTpnZBYU6xCnTiExLwWbSuf83IL8vNS8Eh4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgZGRiYGZuau5oaEycKgBlXUt9</recordid><startdate>20221222</startdate><enddate>20221222</enddate><creator>Pfeuffer, Alexander F</creator><creator>Schwarz, Thomas</creator><creator>Hoibl, Sebastian</creator><creator>Perzlmaier, Korbinian</creator><creator>Meyer, Tobias</creator><scope>EVB</scope></search><sort><creationdate>20221222</creationdate><title>Method for Producing Radiation-Emitting Semiconductor Chips, Radiation-Emitting Semiconductor Chip and Radiation-Emitting Component</title><author>Pfeuffer, Alexander F ; Schwarz, Thomas ; Hoibl, Sebastian ; Perzlmaier, Korbinian ; Meyer, Tobias</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022406757A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Pfeuffer, Alexander F</creatorcontrib><creatorcontrib>Schwarz, Thomas</creatorcontrib><creatorcontrib>Hoibl, Sebastian</creatorcontrib><creatorcontrib>Perzlmaier, Korbinian</creatorcontrib><creatorcontrib>Meyer, Tobias</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pfeuffer, Alexander F</au><au>Schwarz, Thomas</au><au>Hoibl, Sebastian</au><au>Perzlmaier, Korbinian</au><au>Meyer, Tobias</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for Producing Radiation-Emitting Semiconductor Chips, Radiation-Emitting Semiconductor Chip and Radiation-Emitting Component</title><date>2022-12-22</date><risdate>2022</risdate><abstract>In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for Producing Radiation-Emitting Semiconductor Chips, Radiation-Emitting Semiconductor Chip and Radiation-Emitting Component |
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