DATA STORAGE WITH MULTI-LEVEL READ DESTRUCTIVE MEMORY

DATA STORAGE WITH MULTI-LEVEL READ DESTRUCTIVE MEMORY

A data storage system can employ a read destructive memory configured with multiple levels. A non-volatile memory unit can be programmed with a first logical state in response to a first write voltage of a first hysteresis loop by a write controller prior to being programmed to a second logical stat...

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Bibliographische Detailangaben
Hauptverfasser: El-Batal, Mohamad, Mehta, Darshana H, Trantham, Jon D, Viraraghavan, Praveen, Gilbert, Ian J, Dykes, John W, Kalarickal, Sangita Shreedharan, Totin, Matthew J
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:A data storage system can employ a read destructive memory configured with multiple levels. A non-volatile memory unit can be programmed with a first logical state in response to a first write voltage of a first hysteresis loop by a write controller prior to being programmed to a second logical state in response to a second write voltage of the first hysteresis loop, as directed by the write controller. The first and second logical states may be present concurrently in the non-volatile memory unit and subsequently read concurrently as the first logical state and the second logical state.