UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET
A method for fabricating an integrated circuit is disclosed. The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of...
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| creator | Chuang, Ming-Yeh |
| description | A method for fabricating an integrated circuit is disclosed. The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of the semiconductor ridge relative to the sidewalls of the semiconductor ridge. The method further comprises implanting a dopant into the top and sidewalls of the semiconductor ridge. |
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The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of the semiconductor ridge relative to the sidewalls of the semiconductor ridge. 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The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of the semiconductor ridge relative to the sidewalls of the semiconductor ridge. The method further comprises implanting a dopant into the top and sidewalls of the semiconductor ridge.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAJ9fN08w_yVfD0DfBx9AtRCHJ19_T3C1bw9FNwVAh29fV09vdzCXUO8Q9SCPJ0cXdV8HcDSrh5-rm5hvAwsKYl5hSn8kJpbgZloKizh25qQX58anFBYnJqXmpJfGiwkYGRkbGlsYGRoaOhMXGqAJEpKic</recordid><startdate>20221208</startdate><enddate>20221208</enddate><creator>Chuang, Ming-Yeh</creator><scope>EVB</scope></search><sort><creationdate>20221208</creationdate><title>UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET</title><author>Chuang, Ming-Yeh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022393021A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chuang, Ming-Yeh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chuang, Ming-Yeh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET</title><date>2022-12-08</date><risdate>2022</risdate><abstract>A method for fabricating an integrated circuit is disclosed. The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of the semiconductor ridge relative to the sidewalls of the semiconductor ridge. The method further comprises implanting a dopant into the top and sidewalls of the semiconductor ridge.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET |
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