PHOTODETECTOR ELEMENT AND IMAGE SENSOR

PHOTODETECTOR ELEMENT AND IMAGE SENSOR

There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregat...

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Hauptverfasser: ONO, Masashi, TAKATA, Masahiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ONO, Masashi
TAKATA, Masahiro
description There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, in which a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1, and a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is 0.10 eV or more. There is also provided an image sensor including the photodetector element.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTODETECTOR ELEMENT AND IMAGE SENSOR
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