HYBRID DIFFUSION BREAK WITH EUV GATE PATTERNING

HYBRID DIFFUSION BREAK WITH EUV GATE PATTERNING

An apparatus comprising a substrate, a first nanosheet device located on the substrate, and a second nanosheet device located on the substrate, wherein the second nanosheet device is adjacent to the first nanosheet device. At least one first gate located on the first nanosheet device, wherein the at...

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Hauptverfasser: Miller, Eric, Greene, Andrew M, Seshadri, Indira, Basker, Veeraraghavan S, Frougier, Julien
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Miller, Eric
Greene, Andrew M
Seshadri, Indira
Basker, Veeraraghavan S
Frougier, Julien
description An apparatus comprising a substrate, a first nanosheet device located on the substrate, and a second nanosheet device located on the substrate, wherein the second nanosheet device is adjacent to the first nanosheet device. At least one first gate located on the first nanosheet device, wherein the at least one first gate has a first width. At least one second gate located on the second nanosheet device, wherein the at least one second gate has a second width, wherein the first width and the second width are substantially the same. A diffusion break located between the first nanosheet device and the second nanosheet device, wherein the diffusion break prevents the first nanosheet device from contacting the second nanosheet device, wherein the diffusion break has a third width, wherein the third width is larger than the first width and the second width.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title HYBRID DIFFUSION BREAK WITH EUV GATE PATTERNING
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