THREE-DIMENSIONAL SEMICONDUCTOR DEVICES

THREE-DIMENSIONAL SEMICONDUCTOR DEVICES

A three-dimensional semiconductor memory device is disclosed. The device may include a first source conductive pattern comprising a polycrystalline material including first crystal grains on a substrate, the substrate may comprising a polycrystalline material including second crystal grains, a grain...

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Hauptverfasser: CHOI, Ji-Hoon, KIM, Jung-Hwan, KIM, Sunggil, KIM, Seulye, KIM, Dongkyum
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHOI, Ji-Hoon
KIM, Jung-Hwan
KIM, Sunggil
KIM, Seulye
KIM, Dongkyum
description A three-dimensional semiconductor memory device is disclosed. The device may include a first source conductive pattern comprising a polycrystalline material including first crystal grains on a substrate, the substrate may comprising a polycrystalline material including second crystal grains, a grain size of the first crystal grains being smaller than a grain size of the second crystal grains, a stack including a plurality of gate electrodes, the plurality of gates stacked on the first source conductive pattern, and a vertical channel portion penetrating the stack and the first source conductive pattern, and the vertical channel portion being in contact with a side surface of the first source conductive pattern.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THREE-DIMENSIONAL SEMICONDUCTOR DEVICES
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