THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES

A three-dimensional (3D) semiconductor memory device includes a source conductive pattern on a substrate and extending in parallel to a top surface of the substrate, and an electrode structure including an erase control gate electrode, a ground selection gate electrode, cell gate electrodes, and a s...

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Hauptverfasser: Jung, Euntaek, Hong, SangJun, Shin, JoongShik
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Sprache:eng
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ELECTRICITY
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creator Jung, Euntaek
Hong, SangJun
Shin, JoongShik
description A three-dimensional (3D) semiconductor memory device includes a source conductive pattern on a substrate and extending in parallel to a top surface of the substrate, and an electrode structure including an erase control gate electrode, a ground selection gate electrode, cell gate electrodes, and a string selection gate electrode, which are sequentially stacked on the source conductive pattern in a first direction perpendicular to the top surface of the substrate.
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title THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
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