SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers incl...

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Bibliographische Detailangaben
1. Verfasser: SHIMA, Yusuke
Format: Patent
Sprache:eng
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