NITRIDE-BASED SEMICONDUCTOR BIDIRECTIONAL SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present disclosure provides a nitride-based bidirectional switching device with substrate potential management capability. The device has a control node, a first power/load node, a second power/load node and a main substrate, and comprises: a nitride-based bilateral transistor and a substrate po...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YANG, Guanshen, CHENG, Shaopeng, ZHOU, Chunhua, LI, Maolin, GAO, Wuhao, YANG, Chao, ZHAO, Qiyue
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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