CAPACITIVE SENSOR AND INPUT DEVICE
A capacitive sensor has a structure in which first transparent electrode portions and second transparent electrode portions formed from crystalline indium tin oxide (ITO) are provided on a base material by patterning. A bridge wiring portion formed from amorphous indium zinc oxide (IZO) is provided...
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| creator | YAZAWA, Manabu YAMAMURA, Ken TAKAHASHI, Sota |
| description | A capacitive sensor has a structure in which first transparent electrode portions and second transparent electrode portions formed from crystalline indium tin oxide (ITO) are provided on a base material by patterning. A bridge wiring portion formed from amorphous indium zinc oxide (IZO) is provided on each two adjacent first transparent electrode portions and a link continuous to them, with an insulating layer intervening between the bridge wiring portion and the two first transparent electrode portions and link. These two adjacent second transparent electrode portions are electrically connected together by the bridge wiring portion. The thickness of the second transparent electrode portion TE and the thickness of the bridge wiring portion TB satisfy the following expressions: 0.28×TE+83 nm≤TB≤0.69×TE+105 nm; and 30 nm≤TE≤50 nm. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022382413A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022382413A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022382413A13</originalsourceid><addsrcrecordid>eNrjZFBydgxwdPYM8QxzVQh29Qv2D1Jw9HNR8PQLCA1RcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRsYWRiaGxo6GxsSpAgC1OSM5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CAPACITIVE SENSOR AND INPUT DEVICE</title><source>esp@cenet</source><creator>YAZAWA, Manabu ; YAMAMURA, Ken ; TAKAHASHI, Sota</creator><creatorcontrib>YAZAWA, Manabu ; YAMAMURA, Ken ; TAKAHASHI, Sota</creatorcontrib><description>A capacitive sensor has a structure in which first transparent electrode portions and second transparent electrode portions formed from crystalline indium tin oxide (ITO) are provided on a base material by patterning. A bridge wiring portion formed from amorphous indium zinc oxide (IZO) is provided on each two adjacent first transparent electrode portions and a link continuous to them, with an insulating layer intervening between the bridge wiring portion and the two first transparent electrode portions and link. These two adjacent second transparent electrode portions are electrically connected together by the bridge wiring portion. The thickness of the second transparent electrode portion TE and the thickness of the bridge wiring portion TB satisfy the following expressions: 0.28×TE+83 nm≤TB≤0.69×TE+105 nm; and 30 nm≤TE≤50 nm.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221201&DB=EPODOC&CC=US&NR=2022382413A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221201&DB=EPODOC&CC=US&NR=2022382413A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAZAWA, Manabu</creatorcontrib><creatorcontrib>YAMAMURA, Ken</creatorcontrib><creatorcontrib>TAKAHASHI, Sota</creatorcontrib><title>CAPACITIVE SENSOR AND INPUT DEVICE</title><description>A capacitive sensor has a structure in which first transparent electrode portions and second transparent electrode portions formed from crystalline indium tin oxide (ITO) are provided on a base material by patterning. A bridge wiring portion formed from amorphous indium zinc oxide (IZO) is provided on each two adjacent first transparent electrode portions and a link continuous to them, with an insulating layer intervening between the bridge wiring portion and the two first transparent electrode portions and link. These two adjacent second transparent electrode portions are electrically connected together by the bridge wiring portion. The thickness of the second transparent electrode portion TE and the thickness of the bridge wiring portion TB satisfy the following expressions: 0.28×TE+83 nm≤TB≤0.69×TE+105 nm; and 30 nm≤TE≤50 nm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBydgxwdPYM8QxzVQh29Qv2D1Jw9HNR8PQLCA1RcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRsYWRiaGxo6GxsSpAgC1OSM5</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>YAZAWA, Manabu</creator><creator>YAMAMURA, Ken</creator><creator>TAKAHASHI, Sota</creator><scope>EVB</scope></search><sort><creationdate>20221201</creationdate><title>CAPACITIVE SENSOR AND INPUT DEVICE</title><author>YAZAWA, Manabu ; YAMAMURA, Ken ; TAKAHASHI, Sota</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022382413A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YAZAWA, Manabu</creatorcontrib><creatorcontrib>YAMAMURA, Ken</creatorcontrib><creatorcontrib>TAKAHASHI, Sota</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAZAWA, Manabu</au><au>YAMAMURA, Ken</au><au>TAKAHASHI, Sota</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CAPACITIVE SENSOR AND INPUT DEVICE</title><date>2022-12-01</date><risdate>2022</risdate><abstract>A capacitive sensor has a structure in which first transparent electrode portions and second transparent electrode portions formed from crystalline indium tin oxide (ITO) are provided on a base material by patterning. A bridge wiring portion formed from amorphous indium zinc oxide (IZO) is provided on each two adjacent first transparent electrode portions and a link continuous to them, with an insulating layer intervening between the bridge wiring portion and the two first transparent electrode portions and link. These two adjacent second transparent electrode portions are electrically connected together by the bridge wiring portion. The thickness of the second transparent electrode portion TE and the thickness of the bridge wiring portion TB satisfy the following expressions: 0.28×TE+83 nm≤TB≤0.69×TE+105 nm; and 30 nm≤TE≤50 nm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | CAPACITIVE SENSOR AND INPUT DEVICE |
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