FIELD EFFECT TRANSISTORS WITH MODIFIED ACCESS REGIONS

FIELD EFFECT TRANSISTORS WITH MODIFIED ACCESS REGIONS

A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, wherein the barrier layer has a higher bandgap than the channel layer. A modified access region is provided at an upper surface of the barrier layer opposite the...

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Hauptverfasser: Sheppard, Scott, Radulescu, Fabian, Lee, Kyoung-Keun
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Sheppard, Scott
Radulescu, Fabian
Lee, Kyoung-Keun
description A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, wherein the barrier layer has a higher bandgap than the channel layer. A modified access region is provided at an upper surface of the barrier layer opposite the channel layer. The modified access region includes a material having a lower surface barrier height than the barrier layer. A source contact and a drain contact are formed on the barrier layer, and a gate contact is formed between source contact and the drain contact.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FIELD EFFECT TRANSISTORS WITH MODIFIED ACCESS REGIONS
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