SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device includes a gate electrode, first and second passivation layers, first and second field plates. The gate electrode is disposed above nitride-based semiconductor layers. The first passivation layer covers the gate electrode. The first field plate is disposed on the first passiva...

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Hauptverfasser: GAO, Wuhao, LIN, Fengming, ZHAO, Qiyue
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator GAO, Wuhao
LIN, Fengming
ZHAO, Qiyue
description A semiconductor device includes a gate electrode, first and second passivation layers, first and second field plates. The gate electrode is disposed above nitride-based semiconductor layers. The first passivation layer covers the gate electrode. The first field plate is disposed on the first passivation layer. The first passivation layer has a first portion covered with the first field plate and a second portion free from coverage of the first field plate. The second passivation layer covers the first field plate. The second field plate is disposed over the second passivation layer. The second passivation has a first portion covered with the second field plate and a second portion is free from coverage of the second field plate. A thickness difference between the first and second portions of the first passivation layer is less than a thickness difference between the first and second portions of the second passivation layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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