LOW DEFECT, HIGH MOBILITY THIN FILM TRANSISTORS WITH IN-SITU DOPED METAL OXIDE CHANNEL MATERIAL

Transistors with metal oxide channel material that is in-situ doped for desired charge carrier concentrations. The metal oxide channel material may be deposited by atomic layering of multiple constituent metals with an oxidation of each layer. Such an ALD process may be performed by cyclically depos...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sell, Bernhard, Ku, Chieh-Jen, Goldstein, David, Jen, Timothy, Baran, Andre
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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