GAS SUPPLY DEVICE AND GAS SUPPLY METHOD
A gas supply device that supplies a processing gas to a processing container storing a substrate and performs a process includes: a raw material container configured to accommodate a liquid raw material or a solid raw material; a carrier gas supply configured to supply a carrier gas into the raw mat...
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| creator | HOTTA, Takanobu NARUSHIMA, Kensaku MATSUMOTO, Atsushi KIMOTO, Tomohisa KAWAGUCHI, Takuya |
| description | A gas supply device that supplies a processing gas to a processing container storing a substrate and performs a process includes: a raw material container configured to accommodate a liquid raw material or a solid raw material; a carrier gas supply configured to supply a carrier gas into the raw material container; a gas supply path configured to supply the processing gas, which includes the raw material that has been vaporized and the carrier gas, from the raw material container to the processing container; a flow meter provided in the gas supply path and configured to measure a flow rate of the processing gas; and a constricted flow path provided on a downstream side of the flow meter in the gas supply path and configured to increase an average pressure value between the constricted flow path and the flow meter in the gas supply path. |
| format | Patent |
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a carrier gas supply configured to supply a carrier gas into the raw material container; a gas supply path configured to supply the processing gas, which includes the raw material that has been vaporized and the carrier gas, from the raw material container to the processing container; a flow meter provided in the gas supply path and configured to measure a flow rate of the processing gas; and a constricted flow path provided on a downstream side of the flow meter in the gas supply path and configured to increase an average pressure value between the constricted flow path and the flow meter in the gas supply path.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; 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a carrier gas supply configured to supply a carrier gas into the raw material container; a gas supply path configured to supply the processing gas, which includes the raw material that has been vaporized and the carrier gas, from the raw material container to the processing container; a flow meter provided in the gas supply path and configured to measure a flow rate of the processing gas; and a constricted flow path provided on a downstream side of the flow meter in the gas supply path and configured to increase an average pressure value between the constricted flow path and the flow meter in the gas supply path.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB3dwxWCA4NCPCJVHBxDfN0dlVw9HNRQBL1dQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkZGxqZmphaGjobGxKkCAGGAJJo</recordid><startdate>20221110</startdate><enddate>20221110</enddate><creator>HOTTA, Takanobu</creator><creator>NARUSHIMA, Kensaku</creator><creator>MATSUMOTO, Atsushi</creator><creator>KIMOTO, Tomohisa</creator><creator>KAWAGUCHI, Takuya</creator><scope>EVB</scope></search><sort><creationdate>20221110</creationdate><title>GAS SUPPLY DEVICE AND GAS SUPPLY METHOD</title><author>HOTTA, Takanobu ; 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a carrier gas supply configured to supply a carrier gas into the raw material container; a gas supply path configured to supply the processing gas, which includes the raw material that has been vaporized and the carrier gas, from the raw material container to the processing container; a flow meter provided in the gas supply path and configured to measure a flow rate of the processing gas; and a constricted flow path provided on a downstream side of the flow meter in the gas supply path and configured to increase an average pressure value between the constricted flow path and the flow meter in the gas supply path.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | GAS SUPPLY DEVICE AND GAS SUPPLY METHOD |
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