METHOD AND APPARATUS WITH HIGH CONDUCTANCE COMPONENTS FOR CHAMBER CLEANING

Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is cou...

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Bibliographische Detailangaben
Hauptverfasser:	GANTA, Sathya Swaroop, SINGH, Anup Kumar, PINSON, II, Jay D, ALAYAVALLI, Kaushik Comandoor, KUSTRA, Rick
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.