BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM SAME

Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline regi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Ontalus, Viorel C, Holt, Judson R
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	Ontalus, Viorel C Holt, Judson R
description	Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022336646A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022336646A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022336646A13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQgOEsDqK-w4GzoIlkvzZXEmgayV3VrRSJk2ihvj86-ABO__D9S-WrcEotZpCMHQeWlOESxAO1dEYhB3SVHL5UQ4VMgJ2DSOKTY5AETcoRGCOt1eI-Puay-XWltg1J7Xdleg1lnsZbeZb30LPea22MtUeLB_Pf9QHDoC3H</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM SAME</title><source>esp@cenet</source><creator>Ontalus, Viorel C ; Holt, Judson R</creator><creatorcontrib>Ontalus, Viorel C ; Holt, Judson R</creatorcontrib><description>Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221020&DB=EPODOC&CC=US&NR=2022336646A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221020&DB=EPODOC&CC=US&NR=2022336646A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ontalus, Viorel C</creatorcontrib><creatorcontrib>Holt, Judson R</creatorcontrib><title>BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM SAME</title><description>Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQgOEsDqK-w4GzoIlkvzZXEmgayV3VrRSJk2ihvj86-ABO__D9S-WrcEotZpCMHQeWlOESxAO1dEYhB3SVHL5UQ4VMgJ2DSOKTY5AETcoRGCOt1eI-Puay-XWltg1J7Xdleg1lnsZbeZb30LPea22MtUeLB_Pf9QHDoC3H</recordid><startdate>20221020</startdate><enddate>20221020</enddate><creator>Ontalus, Viorel C</creator><creator>Holt, Judson R</creator><scope>EVB</scope></search><sort><creationdate>20221020</creationdate><title>BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM SAME</title><author>Ontalus, Viorel C ; Holt, Judson R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022336646A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Ontalus, Viorel C</creatorcontrib><creatorcontrib>Holt, Judson R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ontalus, Viorel C</au><au>Holt, Judson R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM SAME</title><date>2022-10-20</date><risdate>2022</risdate><abstract>Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US2022336646A1
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM SAME
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T19%3A04%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ontalus,%20Viorel%20C&rft.date=2022-10-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022336646A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true