ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode m...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | KIM, Tae Hoon HAN, Ji Sun ZANG, Hwan Jun KIM, Myoung Sub LEE, Beom Seok LEE, Seung Yun CHO, Byung Jick |
description | A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022320427A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022320427A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022320427A13</originalsourceid><addsrcrecordid>eNrjZHBw9XF1Dgny9_N0VnBxDfN0dlVw9HNR8HUN8fB3UXDzD1LwdfQLdXN0DgkN8vRzV8BQzsPAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4kODjQyMjIyNDEyMzB0NjYlTBQBEyytq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><source>esp@cenet</source><creator>KIM, Tae Hoon ; HAN, Ji Sun ; ZANG, Hwan Jun ; KIM, Myoung Sub ; LEE, Beom Seok ; LEE, Seung Yun ; CHO, Byung Jick</creator><creatorcontrib>KIM, Tae Hoon ; HAN, Ji Sun ; ZANG, Hwan Jun ; KIM, Myoung Sub ; LEE, Beom Seok ; LEE, Seung Yun ; CHO, Byung Jick</creatorcontrib><description>A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221006&DB=EPODOC&CC=US&NR=2022320427A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221006&DB=EPODOC&CC=US&NR=2022320427A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, Tae Hoon</creatorcontrib><creatorcontrib>HAN, Ji Sun</creatorcontrib><creatorcontrib>ZANG, Hwan Jun</creatorcontrib><creatorcontrib>KIM, Myoung Sub</creatorcontrib><creatorcontrib>LEE, Beom Seok</creatorcontrib><creatorcontrib>LEE, Seung Yun</creatorcontrib><creatorcontrib>CHO, Byung Jick</creatorcontrib><title>ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><description>A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBw9XF1Dgny9_N0VnBxDfN0dlVw9HNR8HUN8fB3UXDzD1LwdfQLdXN0DgkN8vRzV8BQzsPAmpaYU5zKC6W5GZTdXEOcPXRTC_LjU4sLEpNT81JL4kODjQyMjIyNDEyMzB0NjYlTBQBEyytq</recordid><startdate>20221006</startdate><enddate>20221006</enddate><creator>KIM, Tae Hoon</creator><creator>HAN, Ji Sun</creator><creator>ZANG, Hwan Jun</creator><creator>KIM, Myoung Sub</creator><creator>LEE, Beom Seok</creator><creator>LEE, Seung Yun</creator><creator>CHO, Byung Jick</creator><scope>EVB</scope></search><sort><creationdate>20221006</creationdate><title>ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><author>KIM, Tae Hoon ; HAN, Ji Sun ; ZANG, Hwan Jun ; KIM, Myoung Sub ; LEE, Beom Seok ; LEE, Seung Yun ; CHO, Byung Jick</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022320427A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, Tae Hoon</creatorcontrib><creatorcontrib>HAN, Ji Sun</creatorcontrib><creatorcontrib>ZANG, Hwan Jun</creatorcontrib><creatorcontrib>KIM, Myoung Sub</creatorcontrib><creatorcontrib>LEE, Beom Seok</creatorcontrib><creatorcontrib>LEE, Seung Yun</creatorcontrib><creatorcontrib>CHO, Byung Jick</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, Tae Hoon</au><au>HAN, Ji Sun</au><au>ZANG, Hwan Jun</au><au>KIM, Myoung Sub</au><au>LEE, Beom Seok</au><au>LEE, Seung Yun</au><au>CHO, Byung Jick</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE</title><date>2022-10-06</date><risdate>2022</risdate><abstract>A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2022320427A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T16%3A50%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM,%20Tae%20Hoon&rft.date=2022-10-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022320427A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |