FABRICATION METHOD OF FIN TRANSISTOR

A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, Yu-Hsiang, Chen, Yu-Ruei, Huang, Sheng-Yao, Tsai, Zen-Jay, Chu, Chung-Liang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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