METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM AND DEPOSITION APPARATUS
A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migrati...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TANABE, Yuki TAKEZAWA, Yoshihiro MIYAHARA, Tatsuya SUZUKI, Daisuke |
| description | A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022319846A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022319846A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022319846A13</originalsourceid><addsrcrecordid>eNrjZHD3dQ3x8HdR8HdTcA6KDA5x9PHxjPL0c1dw9PUPCvDwDw1WCPb08XT291Nw8_TxVXD0c1FwcQ3wD_YM8QSKOQYEOAY5hoQG8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjI2NDSwsTM0dDY-JUAQC6hS3q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM AND DEPOSITION APPARATUS</title><source>esp@cenet</source><creator>TANABE, Yuki ; TAKEZAWA, Yoshihiro ; MIYAHARA, Tatsuya ; SUZUKI, Daisuke</creator><creatorcontrib>TANABE, Yuki ; TAKEZAWA, Yoshihiro ; MIYAHARA, Tatsuya ; SUZUKI, Daisuke</creatorcontrib><description>A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221006&DB=EPODOC&CC=US&NR=2022319846A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221006&DB=EPODOC&CC=US&NR=2022319846A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANABE, Yuki</creatorcontrib><creatorcontrib>TAKEZAWA, Yoshihiro</creatorcontrib><creatorcontrib>MIYAHARA, Tatsuya</creatorcontrib><creatorcontrib>SUZUKI, Daisuke</creatorcontrib><title>METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM AND DEPOSITION APPARATUS</title><description>A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD3dQ3x8HdR8HdTcA6KDA5x9PHxjPL0c1dw9PUPCvDwDw1WCPb08XT291Nw8_TxVXD0c1FwcQ3wD_YM8QSKOQYEOAY5hoQG8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjI2NDSwsTM0dDY-JUAQC6hS3q</recordid><startdate>20221006</startdate><enddate>20221006</enddate><creator>TANABE, Yuki</creator><creator>TAKEZAWA, Yoshihiro</creator><creator>MIYAHARA, Tatsuya</creator><creator>SUZUKI, Daisuke</creator><scope>EVB</scope></search><sort><creationdate>20221006</creationdate><title>METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM AND DEPOSITION APPARATUS</title><author>TANABE, Yuki ; TAKEZAWA, Yoshihiro ; MIYAHARA, Tatsuya ; SUZUKI, Daisuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022319846A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TANABE, Yuki</creatorcontrib><creatorcontrib>TAKEZAWA, Yoshihiro</creatorcontrib><creatorcontrib>MIYAHARA, Tatsuya</creatorcontrib><creatorcontrib>SUZUKI, Daisuke</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANABE, Yuki</au><au>TAKEZAWA, Yoshihiro</au><au>MIYAHARA, Tatsuya</au><au>SUZUKI, Daisuke</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM AND DEPOSITION APPARATUS</title><date>2022-10-06</date><risdate>2022</risdate><abstract>A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2022319846A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM AND DEPOSITION APPARATUS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T12%3A06%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TANABE,%20Yuki&rft.date=2022-10-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022319846A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |