POWER AMPLIFIER WITH QUASI-STATIC DRAIN VOLTAGE ADJUSTMENT

A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based...

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Bibliographische Detailangaben

Hauptverfasser:	Martin, Frederick L, Shahverdi, Amin, Reese, Elias, Klemmer, Nikolaus, Dawson, Joel Lawrence, Briffa, Mark, Burra, Gangadhar, Hajjii, Rached, Gengler, Jeff
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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