POWER AMPLIFIER WITH QUASI-STATIC DRAIN VOLTAGE ADJUSTMENT
A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Martin, Frederick L Shahverdi, Amin Reese, Elias Klemmer, Nikolaus Dawson, Joel Lawrence Briffa, Mark Burra, Gangadhar Hajjii, Rached Gengler, Jeff |
| description | A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022302888A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022302888A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022302888A13</originalsourceid><addsrcrecordid>eNrjZLAK8A93DVJw9A3w8XTzBLLCPUM8FAJDHYM9dYNDHEM8nRVcghw9_RTC_H1CHN1dFRxdvEKDQ3xd_UJ4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGRsYGRhYWFo6ExcaoAc34qNA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>POWER AMPLIFIER WITH QUASI-STATIC DRAIN VOLTAGE ADJUSTMENT</title><source>esp@cenet</source><creator>Martin, Frederick L ; Shahverdi, Amin ; Reese, Elias ; Klemmer, Nikolaus ; Dawson, Joel Lawrence ; Briffa, Mark ; Burra, Gangadhar ; Hajjii, Rached ; Gengler, Jeff</creator><creatorcontrib>Martin, Frederick L ; Shahverdi, Amin ; Reese, Elias ; Klemmer, Nikolaus ; Dawson, Joel Lawrence ; Briffa, Mark ; Burra, Gangadhar ; Hajjii, Rached ; Gengler, Jeff</creatorcontrib><description>A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability</description><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220922&DB=EPODOC&CC=US&NR=2022302888A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220922&DB=EPODOC&CC=US&NR=2022302888A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Martin, Frederick L</creatorcontrib><creatorcontrib>Shahverdi, Amin</creatorcontrib><creatorcontrib>Reese, Elias</creatorcontrib><creatorcontrib>Klemmer, Nikolaus</creatorcontrib><creatorcontrib>Dawson, Joel Lawrence</creatorcontrib><creatorcontrib>Briffa, Mark</creatorcontrib><creatorcontrib>Burra, Gangadhar</creatorcontrib><creatorcontrib>Hajjii, Rached</creatorcontrib><creatorcontrib>Gengler, Jeff</creatorcontrib><title>POWER AMPLIFIER WITH QUASI-STATIC DRAIN VOLTAGE ADJUSTMENT</title><description>A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAK8A93DVJw9A3w8XTzBLLCPUM8FAJDHYM9dYNDHEM8nRVcghw9_RTC_H1CHN1dFRxdvEKDQ3xd_UJ4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGRsYGRhYWFo6ExcaoAc34qNA</recordid><startdate>20220922</startdate><enddate>20220922</enddate><creator>Martin, Frederick L</creator><creator>Shahverdi, Amin</creator><creator>Reese, Elias</creator><creator>Klemmer, Nikolaus</creator><creator>Dawson, Joel Lawrence</creator><creator>Briffa, Mark</creator><creator>Burra, Gangadhar</creator><creator>Hajjii, Rached</creator><creator>Gengler, Jeff</creator><scope>EVB</scope></search><sort><creationdate>20220922</creationdate><title>POWER AMPLIFIER WITH QUASI-STATIC DRAIN VOLTAGE ADJUSTMENT</title><author>Martin, Frederick L ; Shahverdi, Amin ; Reese, Elias ; Klemmer, Nikolaus ; Dawson, Joel Lawrence ; Briffa, Mark ; Burra, Gangadhar ; Hajjii, Rached ; Gengler, Jeff</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022302888A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Martin, Frederick L</creatorcontrib><creatorcontrib>Shahverdi, Amin</creatorcontrib><creatorcontrib>Reese, Elias</creatorcontrib><creatorcontrib>Klemmer, Nikolaus</creatorcontrib><creatorcontrib>Dawson, Joel Lawrence</creatorcontrib><creatorcontrib>Briffa, Mark</creatorcontrib><creatorcontrib>Burra, Gangadhar</creatorcontrib><creatorcontrib>Hajjii, Rached</creatorcontrib><creatorcontrib>Gengler, Jeff</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Martin, Frederick L</au><au>Shahverdi, Amin</au><au>Reese, Elias</au><au>Klemmer, Nikolaus</au><au>Dawson, Joel Lawrence</au><au>Briffa, Mark</au><au>Burra, Gangadhar</au><au>Hajjii, Rached</au><au>Gengler, Jeff</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POWER AMPLIFIER WITH QUASI-STATIC DRAIN VOLTAGE ADJUSTMENT</title><date>2022-09-22</date><risdate>2022</risdate><abstract>A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2022302888A1 |
| source | esp@cenet |
| subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | POWER AMPLIFIER WITH QUASI-STATIC DRAIN VOLTAGE ADJUSTMENT |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T19%3A32%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Martin,%20Frederick%20L&rft.date=2022-09-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022302888A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |