Forming Nitrogen-Containing Layers as Oxidation Blocking Layers

A method includes forming a silicon layer on a wafer, forming an oxide layer in contact with the silicon layer, and, after the oxide layer is formed, annealing the wafer in an environment comprising ammonia (NH3) to form a dielectric barrier layer between, and in contact with, the silicon layer and...

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Hauptverfasser:	Kao, Wan-Yi, Ko, Chung-Chi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Kao, Wan-Yi Ko, Chung-Chi
description	A method includes forming a silicon layer on a wafer, forming an oxide layer in contact with the silicon layer, and, after the oxide layer is formed, annealing the wafer in an environment comprising ammonia (NH3) to form a dielectric barrier layer between, and in contact with, the silicon layer and the oxide layer. The dielectric barrier layer comprises silicon and nitrogen.
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title	Forming Nitrogen-Containing Layers as Oxidation Blocking Layers
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