ISOTROPIC SILICON NITRIDE REMOVAL

Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-cont...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bhuyan, Bhaskar Jyoti, Jain, Samarth, Korolik, Mikhail, Gee, Paul E, Ang, Kah Wee, Sudijono, John, Yong, Wei Ying Doreen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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