BONDED SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

BONDED SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device wafer includes a first insulating layer, a first device layer on the first insulating layer, and a first bonding layer on the first device layer. The second device wafer includes a second insul...

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Hauptverfasser: Verma, Purakh Raj, Parthasarathy, Shyam, Xing, Su
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Verma, Purakh Raj
Parthasarathy, Shyam
Xing, Su
description A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device wafer includes a first insulating layer, a first device layer on the first insulating layer, and a first bonding layer on the first device layer. The second device wafer includes a second insulating layer, a second device layer on a first side of the second insulating layer, and a second bonding layer on the second device layer. The second device layer includes a second device region and a second transistor in the second device region. The second device wafer is bonded to the first device wafer by bonding the second bonding layer with the first bonding layer. A shielding structure is on a second side of the second insulating layer opposite to the first side and vertically overlapped with the second device region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title BONDED SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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