MOLDED SEMICONDUCTOR MODULE HAVING A MOLD STEP FOR INCREASING CREEPAGE DISTANCE
A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side...
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| creator | Hoe, Tian See Stoek, Thomas Stiller, Bernhard Niendorf, Michael Koe, Kean Ming Murugan, Sanjay Kumar Keli, Elvis Busch, Ludwig Enverga, Angel Nikitin, Ivan Hiew, Mei Fen Tean, Ke Yan Kreiter, Oliver Markus |
| description | A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022262693A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022262693A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022262693A13</originalsourceid><addsrcrecordid>eNrjZPD39fdxcXVRCHb19XT293MJdQ7xD1Lw9XcJ9XFV8HAM8_RzV3BUAClSCA5xDVBwA8p6-jkHuToGg6SADNcAR3dXBRfP4BBHP2dXHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oSHxpsZGBkZGRmZGZp7GhoTJwqAOdlL38</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MOLDED SEMICONDUCTOR MODULE HAVING A MOLD STEP FOR INCREASING CREEPAGE DISTANCE</title><source>esp@cenet</source><creator>Hoe, Tian See ; Stoek, Thomas ; Stiller, Bernhard ; Niendorf, Michael ; Koe, Kean Ming ; Murugan, Sanjay Kumar ; Keli, Elvis ; Busch, Ludwig ; Enverga, Angel ; Nikitin, Ivan ; Hiew, Mei Fen ; Tean, Ke Yan ; Kreiter, Oliver Markus</creator><creatorcontrib>Hoe, Tian See ; Stoek, Thomas ; Stiller, Bernhard ; Niendorf, Michael ; Koe, Kean Ming ; Murugan, Sanjay Kumar ; Keli, Elvis ; Busch, Ludwig ; Enverga, Angel ; Nikitin, Ivan ; Hiew, Mei Fen ; Tean, Ke Yan ; Kreiter, Oliver Markus</creatorcontrib><description>A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220818&DB=EPODOC&CC=US&NR=2022262693A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220818&DB=EPODOC&CC=US&NR=2022262693A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hoe, Tian See</creatorcontrib><creatorcontrib>Stoek, Thomas</creatorcontrib><creatorcontrib>Stiller, Bernhard</creatorcontrib><creatorcontrib>Niendorf, Michael</creatorcontrib><creatorcontrib>Koe, Kean Ming</creatorcontrib><creatorcontrib>Murugan, Sanjay Kumar</creatorcontrib><creatorcontrib>Keli, Elvis</creatorcontrib><creatorcontrib>Busch, Ludwig</creatorcontrib><creatorcontrib>Enverga, Angel</creatorcontrib><creatorcontrib>Nikitin, Ivan</creatorcontrib><creatorcontrib>Hiew, Mei Fen</creatorcontrib><creatorcontrib>Tean, Ke Yan</creatorcontrib><creatorcontrib>Kreiter, Oliver Markus</creatorcontrib><title>MOLDED SEMICONDUCTOR MODULE HAVING A MOLD STEP FOR INCREASING CREEPAGE DISTANCE</title><description>A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD39fdxcXVRCHb19XT293MJdQ7xD1Lw9XcJ9XFV8HAM8_RzV3BUAClSCA5xDVBwA8p6-jkHuToGg6SADNcAR3dXBRfP4BBHP2dXHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oSHxpsZGBkZGRmZGZp7GhoTJwqAOdlL38</recordid><startdate>20220818</startdate><enddate>20220818</enddate><creator>Hoe, Tian See</creator><creator>Stoek, Thomas</creator><creator>Stiller, Bernhard</creator><creator>Niendorf, Michael</creator><creator>Koe, Kean Ming</creator><creator>Murugan, Sanjay Kumar</creator><creator>Keli, Elvis</creator><creator>Busch, Ludwig</creator><creator>Enverga, Angel</creator><creator>Nikitin, Ivan</creator><creator>Hiew, Mei Fen</creator><creator>Tean, Ke Yan</creator><creator>Kreiter, Oliver Markus</creator><scope>EVB</scope></search><sort><creationdate>20220818</creationdate><title>MOLDED SEMICONDUCTOR MODULE HAVING A MOLD STEP FOR INCREASING CREEPAGE DISTANCE</title><author>Hoe, Tian See ; Stoek, Thomas ; Stiller, Bernhard ; Niendorf, Michael ; Koe, Kean Ming ; Murugan, Sanjay Kumar ; Keli, Elvis ; Busch, Ludwig ; Enverga, Angel ; Nikitin, Ivan ; Hiew, Mei Fen ; Tean, Ke Yan ; Kreiter, Oliver Markus</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022262693A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Hoe, Tian See</creatorcontrib><creatorcontrib>Stoek, Thomas</creatorcontrib><creatorcontrib>Stiller, Bernhard</creatorcontrib><creatorcontrib>Niendorf, Michael</creatorcontrib><creatorcontrib>Koe, Kean Ming</creatorcontrib><creatorcontrib>Murugan, Sanjay Kumar</creatorcontrib><creatorcontrib>Keli, Elvis</creatorcontrib><creatorcontrib>Busch, Ludwig</creatorcontrib><creatorcontrib>Enverga, Angel</creatorcontrib><creatorcontrib>Nikitin, Ivan</creatorcontrib><creatorcontrib>Hiew, Mei Fen</creatorcontrib><creatorcontrib>Tean, Ke Yan</creatorcontrib><creatorcontrib>Kreiter, Oliver Markus</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hoe, Tian See</au><au>Stoek, Thomas</au><au>Stiller, Bernhard</au><au>Niendorf, Michael</au><au>Koe, Kean Ming</au><au>Murugan, Sanjay Kumar</au><au>Keli, Elvis</au><au>Busch, Ludwig</au><au>Enverga, Angel</au><au>Nikitin, Ivan</au><au>Hiew, Mei Fen</au><au>Tean, Ke Yan</au><au>Kreiter, Oliver Markus</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MOLDED SEMICONDUCTOR MODULE HAVING A MOLD STEP FOR INCREASING CREEPAGE DISTANCE</title><date>2022-08-18</date><risdate>2022</risdate><abstract>A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MOLDED SEMICONDUCTOR MODULE HAVING A MOLD STEP FOR INCREASING CREEPAGE DISTANCE |
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