SEMICONDUCTOR DEVICE WITH EPITAXIAL LIFTOFF LAYERS FOR DIRECTLY CONVERTING RADIOISOTOPE EMISSIONS INTO ELECTRICAL POWER

A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical curren...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Cabauy, Peter
Format:	Patent
Sprache:	eng
Schlagworte:	APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOTOTHERWISE PROVIDED FOR BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY NUCLEAR ENGINEERING NUCLEAR PHYSICS OBTAINING ENERGY FROM RADIOACTIVE SOURCES PHYSICS SEMICONDUCTOR DEVICES UTILISING COSMIC RADIATION
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