INTEGRATED CIRCUITS AND METHOD OF MANUFACTURING THE SAME

An integrated circuit (IC) device includes first and second fin-type semiconductor active regions on a substrate. A plurality of first semiconductor patterns are provided, which are stacked on the first fin-type active region as a first plurality of spaced-apart channel regions of a first FINFET. A...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Park, Minjung, Song, Jaeyeol, Kim, Rakhwan, Lee, Dongsoo, Oh, Seungha
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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