MEMORY DEVICE SKIPPING REFRESH OPERATION AND OPERATION METHOD THEREOF

MEMORY DEVICE SKIPPING REFRESH OPERATION AND OPERATION METHOD THEREOF

Provided are a memory device skipping a refresh operation and an operating method thereof. The memory device includes a memory cell array including N rows; a refresh controller configured to control a refresh operation for the N rows of the memory cell array based on a refresh command; and an access...

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Hauptverfasser: KIM, Minsu, SEO, Deokho, LEE, Changmin, KIM, Namhyung, PARK, Chanik, JUNG, Ilguy, KIM, Daejeong, KIM, Dohan, SHIN, Wonjae, CHOI, Insu
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator KIM, Minsu
SEO, Deokho
LEE, Changmin
KIM, Namhyung
PARK, Chanik
JUNG, Ilguy
KIM, Daejeong
KIM, Dohan
SHIN, Wonjae
CHOI, Insu
description Provided are a memory device skipping a refresh operation and an operating method thereof. The memory device includes a memory cell array including N rows; a refresh controller configured to control a refresh operation for the N rows of the memory cell array based on a refresh command; and an access information storage circuit including a plurality of registers configured to store flag information corresponding to each of the N rows, wherein a first value indicates rows that have been accessed, and a second value indicates rows that have not been accessed. The refresh controller is further configured to control whether the refresh operation is performed for a first row of the N rows at a refresh timing for the first row based on the flag information corresponding to the first row
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title MEMORY DEVICE SKIPPING REFRESH OPERATION AND OPERATION METHOD THEREOF
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