VARIABLE RESISTANCE MEMORY DEVICE HAVING AN ANTI-OXIDATION LAYER AND A METHOD OF MANUFACTURING THE SAME

VARIABLE RESISTANCE MEMORY DEVICE HAVING AN ANTI-OXIDATION LAYER AND A METHOD OF MANUFACTURING THE SAME

A variable resistance memory device is provided including a plurality of lower electrodes disposed on a substrate. A plurality of variable resistors are disposed on the plurality of lower electrodes. A plurality of upper electrodes are disposed on the plurality of variable resistors. An interlayer i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AHN, SANGHOON, Kwon, Oik, Park, Jeonghee, Hwang, Kihyun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A variable resistance memory device is provided including a plurality of lower electrodes disposed on a substrate. A plurality of variable resistors are disposed on the plurality of lower electrodes. A plurality of upper electrodes are disposed on the plurality of variable resistors. An interlayer insulating layer fills a space in the plurality of variable resistors. An anti-oxidation layer is disposed between the plurality of variable resistors and the interlayer insulating layer. The anti-oxidation layer covers side surfaces of the plurality of variable resistors, and the anti-oxidation layer comprises silicon and/or carbon.