Multi-Gate Devices and Fabricating the Same with Etch Rate Modulation

The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, Zhiqiang, Ho, Jon-Hsu, Cheng, Kuan-Lun, Hsieh, Wen-Hsing, Wu, Chung-Wei, Wang, Chih-Ching, Yang, Chung-I
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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