INTEGRATED THIN FILM RESISTOR AND MEMORY DEVICE

INTEGRATED THIN FILM RESISTOR AND MEMORY DEVICE

The present disclosure relates to semiconductor structures and, more particularly, to an integrated thin film resistor with a memory device and methods of manufacture. The structure includes: a memory device in back end of line (BEOL) materials; and a thin film resistor located in the BEOL materials...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAN, Yun Ling, LIN, Benfu, GAN, Kah Wee
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to an integrated thin film resistor with a memory device and methods of manufacture. The structure includes: a memory device in back end of line (BEOL) materials; and a thin film resistor located in the BEOL materials.