LOW LOSS TANGENT DIELECTRIC BASED ON SPINEL-STRUCTURED OXIDE

LOW LOSS TANGENT DIELECTRIC BASED ON SPINEL-STRUCTURED OXIDE

Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O-Al2O3-TiO2 system comprising an aluminate comprising one of cobalt (Co) or nic...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Polisetty, Srinivas, Hill, Michael David
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CABLES
CONDUCTORS
ELECTRICITY
INSULATORS
RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
WAVEGUIDES
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Beschreibung
Zusammenfassung:Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O-Al2O3-TiO2 system comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally comprises one or more of: a titanate comprising the one of Co or Ni crystallized in a spinel structure, an aluminum oxide and a titanium oxide crystallized in a rutile structure.