SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a memory cell array, a sense amplifier circuit and a random code generator. The memory cell array is divided into a plurality of sub array blocks arranged in a first direction and a second direction crossing the first direction. The sense amplifier circuit is a...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | JUNG, Hangyun KIM, Kiheung HA, Kyungsoo KIM, Junhyung PARK, Sungchul JUNG, Hyojin |
description | A semiconductor memory device includes a memory cell array, a sense amplifier circuit and a random code generator. The memory cell array is divided into a plurality of sub array blocks arranged in a first direction and a second direction crossing the first direction. The sense amplifier circuit is arranged in the second direction with respect to the memory cell array, and includes a plurality of input/output (I/O) sense amplifiers. The random code generator generates a random code which is randomly determined based on a power stabilizing signal and an anti-fuse flag signal. A second group of I/O sense amplifiers selected from among a first group of I/O sense amplifiers performs a data I/O operation by data scrambling data bits of main data. The first group of I/O sense amplifiers correspond to a first group of sub array blocks accessed by an access address. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022208252A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022208252A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022208252A13</originalsourceid><addsrcrecordid>eNrjZAgNdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHZVcPRzUXAEioV4-Lso-Lsp-Ae4BjmGePq5K4R4uCrg0cnDwJqWmFOcyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-JDg40MjIyMDCyMTI0cDY2JUwUAHb8xRg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE</title><source>esp@cenet</source><creator>JUNG, Hangyun ; KIM, Kiheung ; HA, Kyungsoo ; KIM, Junhyung ; PARK, Sungchul ; JUNG, Hyojin</creator><creatorcontrib>JUNG, Hangyun ; KIM, Kiheung ; HA, Kyungsoo ; KIM, Junhyung ; PARK, Sungchul ; JUNG, Hyojin</creatorcontrib><description>A semiconductor memory device includes a memory cell array, a sense amplifier circuit and a random code generator. The memory cell array is divided into a plurality of sub array blocks arranged in a first direction and a second direction crossing the first direction. The sense amplifier circuit is arranged in the second direction with respect to the memory cell array, and includes a plurality of input/output (I/O) sense amplifiers. The random code generator generates a random code which is randomly determined based on a power stabilizing signal and an anti-fuse flag signal. A second group of I/O sense amplifiers selected from among a first group of I/O sense amplifiers performs a data I/O operation by data scrambling data bits of main data. The first group of I/O sense amplifiers correspond to a first group of sub array blocks accessed by an access address.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220630&DB=EPODOC&CC=US&NR=2022208252A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220630&DB=EPODOC&CC=US&NR=2022208252A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JUNG, Hangyun</creatorcontrib><creatorcontrib>KIM, Kiheung</creatorcontrib><creatorcontrib>HA, Kyungsoo</creatorcontrib><creatorcontrib>KIM, Junhyung</creatorcontrib><creatorcontrib>PARK, Sungchul</creatorcontrib><creatorcontrib>JUNG, Hyojin</creatorcontrib><title>SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE</title><description>A semiconductor memory device includes a memory cell array, a sense amplifier circuit and a random code generator. The memory cell array is divided into a plurality of sub array blocks arranged in a first direction and a second direction crossing the first direction. The sense amplifier circuit is arranged in the second direction with respect to the memory cell array, and includes a plurality of input/output (I/O) sense amplifiers. The random code generator generates a random code which is randomly determined based on a power stabilizing signal and an anti-fuse flag signal. A second group of I/O sense amplifiers selected from among a first group of I/O sense amplifiers performs a data I/O operation by data scrambling data bits of main data. The first group of I/O sense amplifiers correspond to a first group of sub array blocks accessed by an access address.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgNdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHZVcPRzUXAEioV4-Lso-Lsp-Ae4BjmGePq5K4R4uCrg0cnDwJqWmFOcyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-JDg40MjIyMDCyMTI0cDY2JUwUAHb8xRg</recordid><startdate>20220630</startdate><enddate>20220630</enddate><creator>JUNG, Hangyun</creator><creator>KIM, Kiheung</creator><creator>HA, Kyungsoo</creator><creator>KIM, Junhyung</creator><creator>PARK, Sungchul</creator><creator>JUNG, Hyojin</creator><scope>EVB</scope></search><sort><creationdate>20220630</creationdate><title>SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE</title><author>JUNG, Hangyun ; KIM, Kiheung ; HA, Kyungsoo ; KIM, Junhyung ; PARK, Sungchul ; JUNG, Hyojin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022208252A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>JUNG, Hangyun</creatorcontrib><creatorcontrib>KIM, Kiheung</creatorcontrib><creatorcontrib>HA, Kyungsoo</creatorcontrib><creatorcontrib>KIM, Junhyung</creatorcontrib><creatorcontrib>PARK, Sungchul</creatorcontrib><creatorcontrib>JUNG, Hyojin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JUNG, Hangyun</au><au>KIM, Kiheung</au><au>HA, Kyungsoo</au><au>KIM, Junhyung</au><au>PARK, Sungchul</au><au>JUNG, Hyojin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE</title><date>2022-06-30</date><risdate>2022</risdate><abstract>A semiconductor memory device includes a memory cell array, a sense amplifier circuit and a random code generator. The memory cell array is divided into a plurality of sub array blocks arranged in a first direction and a second direction crossing the first direction. The sense amplifier circuit is arranged in the second direction with respect to the memory cell array, and includes a plurality of input/output (I/O) sense amplifiers. The random code generator generates a random code which is randomly determined based on a power stabilizing signal and an anti-fuse flag signal. A second group of I/O sense amplifiers selected from among a first group of I/O sense amplifiers performs a data I/O operation by data scrambling data bits of main data. The first group of I/O sense amplifiers correspond to a first group of sub array blocks accessed by an access address.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2022208252A1 |
source | esp@cenet |
subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T11%3A03%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JUNG,%20Hangyun&rft.date=2022-06-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022208252A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |