COMPOUND SEMICONDUCTOR LAYER STACK, METHOD OF FORMING THE SAME, AND LIGHT-EMITTING DEVICE

A compound semiconductor layer stack includes: a first layer 11 being formed on a base 14 and including an island-shaped Alx1Iny1Ga(1-x1-y1)N; a second layer 12 being formed on the first layer 11 and including Alx2Iny2Ga(1-x2-y2)N; and a third layer 13 being formed on an entire surface including a t...

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Hauptverfasser:	KAWANISHI, HIDEKAZU, YANASHIMA, KATSUNORI, NAKAJIMA, HIROSHI, TASAI, KUNIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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creator	KAWANISHI, HIDEKAZU YANASHIMA, KATSUNORI NAKAJIMA, HIROSHI TASAI, KUNIHIKO
description	A compound semiconductor layer stack includes: a first layer 11 being formed on a base 14 and including an island-shaped Alx1Iny1Ga(1-x1-y1)N; a second layer 12 being formed on the first layer 11 and including Alx2Iny2Ga(1-x2-y2)N; and a third layer 13 being formed on an entire surface including a top of the second layer 12, the third layer 13 including Alx3Ga(1-x3)N (provided that the following hold true: 0≤x1
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subjects	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
title	COMPOUND SEMICONDUCTOR LAYER STACK, METHOD OF FORMING THE SAME, AND LIGHT-EMITTING DEVICE
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