Integrated Method for Low-Cost Wide Band Gap Semiconductor Device Manufacturing

A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ravi, Tirunelveli Subramaniam, Gogoi, Bishnu Prasanna
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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