REFLECTIVE MASK BLANK FOR EUVL, REFLECTIVE MASK FOR EUVL, AND METHOD OF MANUFACTURING REFLECTIVE MASK FOR EUVL
A reflective mask blank for EUVL, includes a substrate; a multilayer reflective film reflecting EUV light; an absorber film absorbing EUV light; and an antireflective film. The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this ord...
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| creator | TANABE, Hiroyoshi |
| description | A reflective mask blank for EUVL, includes a substrate; a multilayer reflective film reflecting EUV light; an absorber film absorbing EUV light; and an antireflective film. The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this order. The antireflective film includes an aluminum alloy containing aluminum (Al), and at least one metallic element selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), niobium (Nb), molybdenum (Mo), tungsten (W), and ruthenium (Ru). The aluminum alloy further contains at least one element (X) selected from the group consisting of oxygen (O), nitrogen (N), and boron (B). An aluminum (Al) content of component of the aluminum alloy excluding the element (X) is greater than or equal to 3 at % and less than or equal to 95 at %. |
| format | Patent |
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The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this order. The antireflective film includes an aluminum alloy containing aluminum (Al), and at least one metallic element selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), niobium (Nb), molybdenum (Mo), tungsten (W), and ruthenium (Ru). The aluminum alloy further contains at least one element (X) selected from the group consisting of oxygen (O), nitrogen (N), and boron (B). 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The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this order. The antireflective film includes an aluminum alloy containing aluminum (Al), and at least one metallic element selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), niobium (Nb), molybdenum (Mo), tungsten (W), and ruthenium (Ru). The aluminum alloy further contains at least one element (X) selected from the group consisting of oxygen (O), nitrogen (N), and boron (B). 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The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this order. The antireflective film includes an aluminum alloy containing aluminum (Al), and at least one metallic element selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), niobium (Nb), molybdenum (Mo), tungsten (W), and ruthenium (Ru). The aluminum alloy further contains at least one element (X) selected from the group consisting of oxygen (O), nitrogen (N), and boron (B). An aluminum (Al) content of component of the aluminum alloy excluding the element (X) is greater than or equal to 3 at % and less than or equal to 95 at %.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | REFLECTIVE MASK BLANK FOR EUVL, REFLECTIVE MASK FOR EUVL, AND METHOD OF MANUFACTURING REFLECTIVE MASK FOR EUVL |
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