SEMICONDUCTOR DEVICE

A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern o...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	PARK, Sungil, YOU, Junggun, KIM, Yoonjoong, DO, Seungwoo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	PARK, Sungil YOU, Junggun KIM, Yoonjoong DO, Seungwoo
description	A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern on the substrate; a third channel structure on the third region and including third channel patterns and fourth channel patterns that are vertically and alternately stacked on the substrate; first to third gate electrodes on the first to third channel structures; and first to third source/drain patterns on opposite sides of the first to third channel structures, wherein the first, second, and fourth channel patterns include a first semiconductor material, and the third channel patterns include a second semiconductor material different from the first semiconductor material.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022181489A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022181489A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022181489A13</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRkaGFoYmFpaOhsbEqQIA_cAfqA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>PARK, Sungil ; YOU, Junggun ; KIM, Yoonjoong ; DO, Seungwoo</creator><creatorcontrib>PARK, Sungil ; YOU, Junggun ; KIM, Yoonjoong ; DO, Seungwoo</creatorcontrib><description>A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern on the substrate; a third channel structure on the third region and including third channel patterns and fourth channel patterns that are vertically and alternately stacked on the substrate; first to third gate electrodes on the first to third channel structures; and first to third source/drain patterns on opposite sides of the first to third channel structures, wherein the first, second, and fourth channel patterns include a first semiconductor material, and the third channel patterns include a second semiconductor material different from the first semiconductor material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220609&DB=EPODOC&CC=US&NR=2022181489A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220609&DB=EPODOC&CC=US&NR=2022181489A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK, Sungil</creatorcontrib><creatorcontrib>YOU, Junggun</creatorcontrib><creatorcontrib>KIM, Yoonjoong</creatorcontrib><creatorcontrib>DO, Seungwoo</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern on the substrate; a third channel structure on the third region and including third channel patterns and fourth channel patterns that are vertically and alternately stacked on the substrate; first to third gate electrodes on the first to third channel structures; and first to third source/drain patterns on opposite sides of the first to third channel structures, wherein the first, second, and fourth channel patterns include a first semiconductor material, and the third channel patterns include a second semiconductor material different from the first semiconductor material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRkaGFoYmFpaOhsbEqQIA_cAfqA</recordid><startdate>20220609</startdate><enddate>20220609</enddate><creator>PARK, Sungil</creator><creator>YOU, Junggun</creator><creator>KIM, Yoonjoong</creator><creator>DO, Seungwoo</creator><scope>EVB</scope></search><sort><creationdate>20220609</creationdate><title>SEMICONDUCTOR DEVICE</title><author>PARK, Sungil ; YOU, Junggun ; KIM, Yoonjoong ; DO, Seungwoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022181489A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK, Sungil</creatorcontrib><creatorcontrib>YOU, Junggun</creatorcontrib><creatorcontrib>KIM, Yoonjoong</creatorcontrib><creatorcontrib>DO, Seungwoo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK, Sungil</au><au>YOU, Junggun</au><au>KIM, Yoonjoong</au><au>DO, Seungwoo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2022-06-09</date><risdate>2022</risdate><abstract>A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern on the substrate; a third channel structure on the third region and including third channel patterns and fourth channel patterns that are vertically and alternately stacked on the substrate; first to third gate electrodes on the first to third channel structures; and first to third source/drain patterns on opposite sides of the first to third channel structures, wherein the first, second, and fourth channel patterns include a first semiconductor material, and the third channel patterns include a second semiconductor material different from the first semiconductor material.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US2022181489A1
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T13%3A03%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PARK,%20Sungil&rft.date=2022-06-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022181489A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true