POWER GATE WITH METAL ON BOTH SIDES
An apparatus including a circuit structure including a device stratum including a plurality of transistor devices each including a first side defined by a gate electrode and an opposite second side; and a gated supply grid disposed on the second side of the structure, wherein a drain of the at least...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | An apparatus including a circuit structure including a device stratum including a plurality of transistor devices each including a first side defined by a gate electrode and an opposite second side; and a gated supply grid disposed on the second side of the structure, wherein a drain of the at least one of the plurality of transistor devices is coupled to the gated supply grid. A method including providing a supply from a package substrate to power gate transistors in a device layer of a circuit structure, the transistors coupled to circuitry operable to receive a gated supply from the power gate transistors; and distributing the gated supply from the power gate transistors to the circuitry using a grid on an underside of the device layer. |
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