NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME

A nonvolatile memory device includes a first structure and a second structure bonded to the first structure. The second structure includes a low-resistance conductive layer, a common source line layer on the low-resistance conductive layer, a stack structure above the common source line layer, a plu...

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Bibliographische Detailangaben

Hauptverfasser:	HWANG, Yoonjo, JEON, Wooyong, CHOI, Junyoung, CHOI, Moorym, SUNG, Jungtae, YOON, Sanghee
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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