SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device includes a plurality of first interconnect layers, first and second memory pillars, and a plurality of first plugs. The plurality of first interconnect layers include a first array region where the first memory pillar penetrates the pluralit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OIKE, Go, SUGISAKI, Tsuyoshi
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!