MEMORIES FOR CALIBRATING SENSING OF MEMORY CELL DATA STATES
Memory might include a controller configured to determine, for each sense circuit of a plurality of sense circuits, a respective plurality of first logic levels for that sense circuit while capacitively coupling a respective plurality of voltage levels to its respective sense node, to determine a pa...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Valeri, Gianfranco Moschiano, Violante Di-Francesco, Walter |
description | Memory might include a controller configured to determine, for each sense circuit of a plurality of sense circuits, a respective plurality of first logic levels for that sense circuit while capacitively coupling a respective plurality of voltage levels to its respective sense node, to determine a particular voltage level in response to each respective plurality of first logic levels for the plurality of sense circuits and their respective plurality of voltage levels, and to determine, for each sense circuit of the plurality of sense circuits, a respective second logic level for that sense circuit while capacitively coupling the particular voltage level to its respective sense node. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022148661A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022148661A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022148661A13</originalsourceid><addsrcrecordid>eNrjZLD2dfX1D_J0DVZw8w9ScHb08XQKcgzx9HNXCHb1CwbR_m4KYDWRCs6uPj4KLo4hjgrBIY4hrsE8DKxpiTnFqbxQmptB2c01xNlDN7UgPz61uCAxOTUvtSQ-NNjIwMjI0MTCzMzQ0dCYOFUAcZYqEQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MEMORIES FOR CALIBRATING SENSING OF MEMORY CELL DATA STATES</title><source>esp@cenet</source><creator>Valeri, Gianfranco ; Moschiano, Violante ; Di-Francesco, Walter</creator><creatorcontrib>Valeri, Gianfranco ; Moschiano, Violante ; Di-Francesco, Walter</creatorcontrib><description>Memory might include a controller configured to determine, for each sense circuit of a plurality of sense circuits, a respective plurality of first logic levels for that sense circuit while capacitively coupling a respective plurality of voltage levels to its respective sense node, to determine a particular voltage level in response to each respective plurality of first logic levels for the plurality of sense circuits and their respective plurality of voltage levels, and to determine, for each sense circuit of the plurality of sense circuits, a respective second logic level for that sense circuit while capacitively coupling the particular voltage level to its respective sense node.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220512&DB=EPODOC&CC=US&NR=2022148661A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220512&DB=EPODOC&CC=US&NR=2022148661A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Valeri, Gianfranco</creatorcontrib><creatorcontrib>Moschiano, Violante</creatorcontrib><creatorcontrib>Di-Francesco, Walter</creatorcontrib><title>MEMORIES FOR CALIBRATING SENSING OF MEMORY CELL DATA STATES</title><description>Memory might include a controller configured to determine, for each sense circuit of a plurality of sense circuits, a respective plurality of first logic levels for that sense circuit while capacitively coupling a respective plurality of voltage levels to its respective sense node, to determine a particular voltage level in response to each respective plurality of first logic levels for the plurality of sense circuits and their respective plurality of voltage levels, and to determine, for each sense circuit of the plurality of sense circuits, a respective second logic level for that sense circuit while capacitively coupling the particular voltage level to its respective sense node.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2dfX1D_J0DVZw8w9ScHb08XQKcgzx9HNXCHb1CwbR_m4KYDWRCs6uPj4KLo4hjgrBIY4hrsE8DKxpiTnFqbxQmptB2c01xNlDN7UgPz61uCAxOTUvtSQ-NNjIwMjI0MTCzMzQ0dCYOFUAcZYqEQ</recordid><startdate>20220512</startdate><enddate>20220512</enddate><creator>Valeri, Gianfranco</creator><creator>Moschiano, Violante</creator><creator>Di-Francesco, Walter</creator><scope>EVB</scope></search><sort><creationdate>20220512</creationdate><title>MEMORIES FOR CALIBRATING SENSING OF MEMORY CELL DATA STATES</title><author>Valeri, Gianfranco ; Moschiano, Violante ; Di-Francesco, Walter</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022148661A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Valeri, Gianfranco</creatorcontrib><creatorcontrib>Moschiano, Violante</creatorcontrib><creatorcontrib>Di-Francesco, Walter</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Valeri, Gianfranco</au><au>Moschiano, Violante</au><au>Di-Francesco, Walter</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MEMORIES FOR CALIBRATING SENSING OF MEMORY CELL DATA STATES</title><date>2022-05-12</date><risdate>2022</risdate><abstract>Memory might include a controller configured to determine, for each sense circuit of a plurality of sense circuits, a respective plurality of first logic levels for that sense circuit while capacitively coupling a respective plurality of voltage levels to its respective sense node, to determine a particular voltage level in response to each respective plurality of first logic levels for the plurality of sense circuits and their respective plurality of voltage levels, and to determine, for each sense circuit of the plurality of sense circuits, a respective second logic level for that sense circuit while capacitively coupling the particular voltage level to its respective sense node.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2022148661A1 |
source | esp@cenet |
subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | MEMORIES FOR CALIBRATING SENSING OF MEMORY CELL DATA STATES |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T09%3A07%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Valeri,%20Gianfranco&rft.date=2022-05-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022148661A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |