METHOD OF MEASURING A DEVICE PARAMETER

For example, a method of measuring a device parameter includes: a step of repeatedly measuring the gate-source voltage (or gate-emitter voltage) of a switching element in its switching transient state while switching the external gate resistance for the switching element among m resistance values (w...

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1. Verfasser:	YANAGI, Tatsuya
Format:	Patent
Sprache:	eng
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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creator	YANAGI, Tatsuya
description	For example, a method of measuring a device parameter includes: a step of repeatedly measuring the gate-source voltage (or gate-emitter voltage) of a switching element in its switching transient state while switching the external gate resistance for the switching element among m resistance values (where m is an integer of three or more); and a step of, while representing the internal gate resistance and the plateau voltage of the switching element by Rgin and Vp respectively and using the m resistance values of the external gate resistance and corresponding m voltage values of the gate-source voltage (or gate-emitter voltage) as Rg(k) and Vgs(k) respectively (where k=1, 2 . . . m), performing the fitting of the equation Vgs(k)=Rg(k)/(Rg(k)+Rgin)×Vp, thereby to derive the internal gate resistance Rgin or the plateau voltage Vp of the switching element.
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and a step of, while representing the internal gate resistance and the plateau voltage of the switching element by Rgin and Vp respectively and using the m resistance values of the external gate resistance and corresponding m voltage values of the gate-source voltage (or gate-emitter voltage) as Rg(k) and Vgs(k) respectively (where k=1, 2 . . . m), performing the fitting of the equation Vgs(k)=Rg(k)/(Rg(k)+Rgin)×Vp, thereby to derive the internal gate resistance Rgin or the plateau voltage Vp of the switching element.</description><language>eng</language><subject>MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220512&DB=EPODOC&CC=US&NR=2022146566A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220512&DB=EPODOC&CC=US&NR=2022146566A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YANAGI, Tatsuya</creatorcontrib><title>METHOD OF MEASURING A DEVICE PARAMETER</title><description>For example, a method of measuring a device parameter includes: a step of repeatedly measuring the gate-source voltage (or gate-emitter voltage) of a switching element in its switching transient state while switching the external gate resistance for the switching element among m resistance values (where m is an integer of three or more); and a step of, while representing the internal gate resistance and the plateau voltage of the switching element by Rgin and Vp respectively and using the m resistance values of the external gate resistance and corresponding m voltage values of the gate-source voltage (or gate-emitter voltage) as Rg(k) and Vgs(k) respectively (where k=1, 2 . . . m), performing the fitting of the equation Vgs(k)=Rg(k)/(Rg(k)+Rgin)×Vp, thereby to derive the internal gate resistance Rgin or the plateau voltage Vp of the switching element.</description><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDzdQ3x8HdR8HdT8HV1DA4N8vRzV3BUcHEN83R2VQhwDHIEKnAN4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRoYmZqZmZo6GxsSpAgAxRyQ4</recordid><startdate>20220512</startdate><enddate>20220512</enddate><creator>YANAGI, Tatsuya</creator><scope>EVB</scope></search><sort><creationdate>20220512</creationdate><title>METHOD OF MEASURING A DEVICE PARAMETER</title><author>YANAGI, Tatsuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022146566A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YANAGI, Tatsuya</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YANAGI, Tatsuya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MEASURING A DEVICE PARAMETER</title><date>2022-05-12</date><risdate>2022</risdate><abstract>For example, a method of measuring a device parameter includes: a step of repeatedly measuring the gate-source voltage (or gate-emitter voltage) of a switching element in its switching transient state while switching the external gate resistance for the switching element among m resistance values (where m is an integer of three or more); and a step of, while representing the internal gate resistance and the plateau voltage of the switching element by Rgin and Vp respectively and using the m resistance values of the external gate resistance and corresponding m voltage values of the gate-source voltage (or gate-emitter voltage) as Rg(k) and Vgs(k) respectively (where k=1, 2 . . . m), performing the fitting of the equation Vgs(k)=Rg(k)/(Rg(k)+Rgin)×Vp, thereby to derive the internal gate resistance Rgin or the plateau voltage Vp of the switching element.</abstract><oa>free_for_read</oa></addata></record>
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subjects	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
title	METHOD OF MEASURING A DEVICE PARAMETER
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