RESISTOR WITH DOPED REGIONS
A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a p...
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| creator | SHIN, Woocheol KANG, Myunggil |
| description | A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode. |
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The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220421&DB=EPODOC&CC=US&NR=2022122965A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220421&DB=EPODOC&CC=US&NR=2022122965A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIN, Woocheol</creatorcontrib><creatorcontrib>KANG, Myunggil</creatorcontrib><title>RESISTOR WITH DOPED REGIONS</title><description>A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOcg32DA7xD1II9wzxUHDxD3B1UQhydff09wvmYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkZGhkZGlmamjobGxKkCAOAkIY4</recordid><startdate>20220421</startdate><enddate>20220421</enddate><creator>SHIN, Woocheol</creator><creator>KANG, Myunggil</creator><scope>EVB</scope></search><sort><creationdate>20220421</creationdate><title>RESISTOR WITH DOPED REGIONS</title><author>SHIN, Woocheol ; KANG, Myunggil</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022122965A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIN, Woocheol</creatorcontrib><creatorcontrib>KANG, Myunggil</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIN, Woocheol</au><au>KANG, Myunggil</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESISTOR WITH DOPED REGIONS</title><date>2022-04-21</date><risdate>2022</risdate><abstract>A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | RESISTOR WITH DOPED REGIONS |
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