COMPOSITION FOR RESIST UNDERLAYER, AND PATTERN FORMING METHOD USING SAME

The present invention relates to a resist underlayer composition and a method of forming patterns using the same.According to an embodiment, the resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represen...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KWON, Soonhyung, BAE, Shinhyo, KIM, Minsoo, BAEK, Jaeyeol, CHOI, Yoojeong, PARK, Hyeon
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a resist underlayer composition and a method of forming patterns using the same.According to an embodiment, the resist underlayer composition includes a polymer including a structure represented by Chemical Formula 1 at the terminal end and a structural unit represented by Chemical Formula 2 and a structural unit represented by Chemical Formula 3 in the main chain; and a solvent.Definitions of Chemical Formula 1 to Chemical Formula 3 are the same as described in the detailed description.