GATE MATERIAL-BASED CAPACITOR AND RESISTOR STRUCTURES AND METHODS OF FORMING THE SAME

At least one of a capacitor or a resistor structure can be formed concurrently with formation of a field effect transistor by patterning a gate dielectric layer into gate dielectric and into a first node dielectric or a first resistor isolation dielectric, and by patterning a semiconductor layer int...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IWATA, Dai, TOGO, Mitsuhiro, OGAWA, Hiroyuki, KODATE, Hokuto
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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