FILM-FORMING METHOD, FILM-FORMING APPARATUS, AND OXIDATION METHOD

A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NORO, Naotaka, IKEUCHI, Toshiyuki, SHIMOMURA, Kouji, SHIMAMOTO, Ryoun, HONG, Younggi, MIYATANI, Kotaro
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NORO, Naotaka
IKEUCHI, Toshiyuki
SHIMOMURA, Kouji
SHIMAMOTO, Ryoun
HONG, Younggi
MIYATANI, Kotaro
description A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022068637A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022068637A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022068637A13</originalsourceid><addsrcrecordid>eNrjZHB08_Tx1XXzD_L19HNX8HUN8fB30VFAEXQMCHAMcgwJDdZRcPRzUfCP8HRxDPH094Oq5mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRgZmFmbG5o6GxsSpAgBu2yu_</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FILM-FORMING METHOD, FILM-FORMING APPARATUS, AND OXIDATION METHOD</title><source>esp@cenet</source><creator>NORO, Naotaka ; IKEUCHI, Toshiyuki ; SHIMOMURA, Kouji ; SHIMAMOTO, Ryoun ; HONG, Younggi ; MIYATANI, Kotaro</creator><creatorcontrib>NORO, Naotaka ; IKEUCHI, Toshiyuki ; SHIMOMURA, Kouji ; SHIMAMOTO, Ryoun ; HONG, Younggi ; MIYATANI, Kotaro</creatorcontrib><description>A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220303&amp;DB=EPODOC&amp;CC=US&amp;NR=2022068637A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220303&amp;DB=EPODOC&amp;CC=US&amp;NR=2022068637A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NORO, Naotaka</creatorcontrib><creatorcontrib>IKEUCHI, Toshiyuki</creatorcontrib><creatorcontrib>SHIMOMURA, Kouji</creatorcontrib><creatorcontrib>SHIMAMOTO, Ryoun</creatorcontrib><creatorcontrib>HONG, Younggi</creatorcontrib><creatorcontrib>MIYATANI, Kotaro</creatorcontrib><title>FILM-FORMING METHOD, FILM-FORMING APPARATUS, AND OXIDATION METHOD</title><description>A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB08_Tx1XXzD_L19HNX8HUN8fB30VFAEXQMCHAMcgwJDdZRcPRzUfCP8HRxDPH094Oq5mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRgZmFmbG5o6GxsSpAgBu2yu_</recordid><startdate>20220303</startdate><enddate>20220303</enddate><creator>NORO, Naotaka</creator><creator>IKEUCHI, Toshiyuki</creator><creator>SHIMOMURA, Kouji</creator><creator>SHIMAMOTO, Ryoun</creator><creator>HONG, Younggi</creator><creator>MIYATANI, Kotaro</creator><scope>EVB</scope></search><sort><creationdate>20220303</creationdate><title>FILM-FORMING METHOD, FILM-FORMING APPARATUS, AND OXIDATION METHOD</title><author>NORO, Naotaka ; IKEUCHI, Toshiyuki ; SHIMOMURA, Kouji ; SHIMAMOTO, Ryoun ; HONG, Younggi ; MIYATANI, Kotaro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022068637A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NORO, Naotaka</creatorcontrib><creatorcontrib>IKEUCHI, Toshiyuki</creatorcontrib><creatorcontrib>SHIMOMURA, Kouji</creatorcontrib><creatorcontrib>SHIMAMOTO, Ryoun</creatorcontrib><creatorcontrib>HONG, Younggi</creatorcontrib><creatorcontrib>MIYATANI, Kotaro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NORO, Naotaka</au><au>IKEUCHI, Toshiyuki</au><au>SHIMOMURA, Kouji</au><au>SHIMAMOTO, Ryoun</au><au>HONG, Younggi</au><au>MIYATANI, Kotaro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM-FORMING METHOD, FILM-FORMING APPARATUS, AND OXIDATION METHOD</title><date>2022-03-03</date><risdate>2022</risdate><abstract>A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2022068637A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title FILM-FORMING METHOD, FILM-FORMING APPARATUS, AND OXIDATION METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T07%3A42%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NORO,%20Naotaka&rft.date=2022-03-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022068637A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true