METHOD AND APPARATUS FOR ATOMIC LAYER ETCHING

METHOD AND APPARATUS FOR ATOMIC LAYER ETCHING

A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, an...

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Hauptverfasser: CHO, Byung Chul, JIN, Kwang Seon, HAN, Tian Hao, KWON, Jun Hyuck, AN, Jong Ki, PARK, Sang Jun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHO, Byung Chul
JIN, Kwang Seon
HAN, Tian Hao
KWON, Jun Hyuck
AN, Jong Ki
PARK, Sang Jun
description A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD AND APPARATUS FOR ATOMIC LAYER ETCHING
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