SILICON CARBIDE-BASED FULL-SPECTRUM-RESPONSIVE PHOTODETECTOR AND METHOD FOR PRODUCING SAME

The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface pl...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TIAN, Yuan, FAN, Yaping, CUI, Yanxia, LI, Guohui, YAN, Xianyong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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